Projecting oxide lifetime by a step voltage method using electric field correction [MOS VLSI]

Author

Shigenobu, T. ; Uchida, H. ; Hirashita, N.

Author_Institution

OKI Electric Ind. Co. Ltd., Tokyo, Japan

fYear

1993

fDate

22-25 Mar 1993

Firstpage

125

Lastpage

130

Abstract

The validity of a projection method of time dependent dielectric breakdown (TDDB) lifetime from step voltage tests is investigated. The conventional projection method is found to be unable to project correct lifetime in the intrinsic failure mode. This is caused by a decreased electric field of gate oxide due to the resistance of the gate electrode. A correction method of the electric field based on Fowler-Nordheim current transport is proposed. It yields excellent agreement between projected and measured TDDB lifetimes in all failure modes

Keywords

MOS integrated circuits; VLSI; electric breakdown of solids; failure analysis; integrated circuit testing; Fowler-Nordheim current transport; electric field; electric field correction; failure modes; gate electrode; intrinsic failure mode; oxide lifetime; step voltage method; Breakdown voltage; Current measurement; Electric breakdown; Electric variables measurement; Electrodes; Equations; Life testing; Research and development; Time measurement; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1993. ICMTS 1993. Proceedings of the 1993 International Conference on

Conference_Location

Sitges

Print_ISBN

0-7803-0857-3

Type

conf

DOI

10.1109/ICMTS.1993.292882

Filename

292882