• DocumentCode
    1881412
  • Title

    ENG-Sensor: Enhanced open-ended coaxial line sensor for material characterization application

  • Author

    Suwan, Na´el N. ; Boybay, Muhammad S. ; Ramahi, Omar M.

  • Author_Institution
    Electr. & Comput. Eng. Dept., Univ. of Waterloo, Waterloo, ON, Canada
  • fYear
    2010
  • fDate
    11-17 July 2010
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Material characterization using microwave and radio frequencies has diverse applications such as moisture measurement, process control for food processing, and biological tissue measurement [1, 2]. Among the material characterization techniques, near field open-ended coaxial line sensors are widely used since they do not need extensive sample preparation and have a wide operation band. The design of a classical open-ended coaxial line sensor has been investigated in [3] to maximize the sensitivity in a specific range of measured permittivity. Moreover, in [3] it was shown that for a fixed system impedance, the optimization of the classical coaxial line sensor depended on a single parameter α, where α = af, a is the inner radius of the coaxial line and / is the operation frequency. Recently, it was shown that the use of double negative materials and single negative materials enhances the sensitivity of near field probes [4]. In [5], negative materials were used to improve the sensitivity of open-ended coaxial lines for crack detection on aluminum surfaces. In this paper, the sensitivity definition presented in [3] is used to demonstrate the advantage of using an epsilon negative (ENG) layer with a classical open-ended sensor for material characterization applications.
  • Keywords
    permittivity measurement; sensors; ENG-sensor; enhanced open-ended coaxial line sensor; epsilon negative layer; material characterization; Admittance; Materials; Microwave measurements; Microwave theory and techniques; Permittivity; Probes; Sensitivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Antennas and Propagation Society International Symposium (APSURSI), 2010 IEEE
  • Conference_Location
    Toronto, ON
  • ISSN
    1522-3965
  • Print_ISBN
    978-1-4244-4967-5
  • Type

    conf

  • DOI
    10.1109/APS.2010.5561416
  • Filename
    5561416