• DocumentCode
    1881431
  • Title

    The use of test structures to identify leakage failure mechanisms in CMOS inputs

  • Author

    Orchard-Webb, J.H.

  • Author_Institution
    Mitel Semicond., Kanata, Ont., Canada
  • fYear
    1993
  • fDate
    22-25 Mar 1993
  • Firstpage
    117
  • Lastpage
    120
  • Abstract
    An input structure is dissected into simple components and into combinations of components, and is processed so that the device performance under stress can be clearly understood. The study of leakage currents in these structures is then used to identify the location and cause of leakage in a complete device. The failure mechanism is shown to be caused by inversion at the edge of the n+Vdd connection of the thick oxide protection diode
  • Keywords
    CMOS integrated circuits; failure analysis; integrated circuit testing; CMOS inputs; device performance; failure mechanism; inversion; leakage currents; leakage failure mechanisms; test structures; thick oxide protection diode; Diodes; Electrostatic discharge; Failure analysis; Impedance; Leakage current; Protection; Stress; Temperature; Testing; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronic Test Structures, 1993. ICMTS 1993. Proceedings of the 1993 International Conference on
  • Conference_Location
    Sitges
  • Print_ISBN
    0-7803-0857-3
  • Type

    conf

  • DOI
    10.1109/ICMTS.1993.292884
  • Filename
    292884
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1881431