Title :
The use of test structures to identify leakage failure mechanisms in CMOS inputs
Author :
Orchard-Webb, J.H.
Author_Institution :
Mitel Semicond., Kanata, Ont., Canada
Abstract :
An input structure is dissected into simple components and into combinations of components, and is processed so that the device performance under stress can be clearly understood. The study of leakage currents in these structures is then used to identify the location and cause of leakage in a complete device. The failure mechanism is shown to be caused by inversion at the edge of the n+Vdd connection of the thick oxide protection diode
Keywords :
CMOS integrated circuits; failure analysis; integrated circuit testing; CMOS inputs; device performance; failure mechanism; inversion; leakage currents; leakage failure mechanisms; test structures; thick oxide protection diode; Diodes; Electrostatic discharge; Failure analysis; Impedance; Leakage current; Protection; Stress; Temperature; Testing; Voltage;
Conference_Titel :
Microelectronic Test Structures, 1993. ICMTS 1993. Proceedings of the 1993 International Conference on
Conference_Location :
Sitges
Print_ISBN :
0-7803-0857-3
DOI :
10.1109/ICMTS.1993.292884
