SEU/SRAM as a process monitor

Author

Blaes, B.R. ; Buehler, M.G.

Author_Institution

Jet Propulsion Lab., Pasadena, CA, USA

fYear

1993

fDate

22-25 Mar 1993

Firstpage

57

Lastpage

62

Abstract

The SEU/SRAM is a 4-b static random access memory (SRAM) designed to detect single-event upsets (SEUs) produced by high energy particles. This device is used to determine the distribution in the memory cell spontaneous flip potential. The variance in this potential is determined to be due to the variation in the n-MOSFET threshold voltage. For a 1.2-μm CMOS process, the standard deviation is found to be 8 mV. Using cumulative distribution and residual plots, stuck cells and nonnormally distributed cells are easily identified

Keywords

CMOS integrated circuits; SRAM chips; cellular arrays; 1.2 micron; CMOS process; SEU/SRAM; cumulative distribution; high energy particles; memory cell spontaneous flip potential; n-MOSFET threshold voltage; nonnormally distributed cells; process monitor; residual plots; single-event upsets; stuck cells; CMOS process; Electrical resistance measurement; Inverters; MOSFETs; Monitoring; Random access memory; Semiconductor device modeling; Single event upset; Testing; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1993. ICMTS 1993. Proceedings of the 1993 International Conference on

Conference_Location

Sitges

Print_ISBN

0-7803-0857-3

Type

conf

DOI

10.1109/ICMTS.1993.292893

Filename

292893