Enhanced gate-controlled-diode current (EGCDC) measurement

Author

Viswanathan, C.R. ; Hsu, Jen-Tai ; Aum, Paul ; Chan, David

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

fYear

1993

fDate

22-25 Mar 1993

Firstpage

45

Lastpage

49

Abstract

A technique for the measurement of the gate-controlled-diode-current (GCDC) in short-channel MOS transistors is described. This technique uses the internal bipolar action of the MOS transistor to amplify the GCDC, thereby extending the sensitivity of the measurement. Results of measurements on small geometry devices, as well as on larger devices, are given. A model based on parasitic bipolar transistor action is given for the enhanced gate-controlled diode current (EGCDC)

Keywords

electric current measurement; insulated gate field effect transistors; semiconductor device testing; current measurement; enhanced gate-controlled diode current; internal bipolar action; parasitic bipolar transistor action; sensitivity; short-channel MOS transistors; small geometry devices; Area measurement; Capacitance; Current measurement; Electric variables measurement; Geometry; Leakage current; MOSFETs; Semiconductor diodes; Substrates; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1993. ICMTS 1993. Proceedings of the 1993 International Conference on

Conference_Location

Sitges

Print_ISBN

0-7803-0857-3

Type

conf

DOI

10.1109/ICMTS.1993.292895

Filename

292895