Carrier transport in quantum dot structures

In the strict sense, the carrier capture or escape processes in QWs are consequences. The prime cause of these phenomena, as well as the reason of finite conductivity of solids existence, is the. carrier scattering on various deviation of the crystal lattice potential from an ideal periodic lattice potential. These deviations can be impurity atoms (ions), crystal boundaries, crystal lattice vibrations. If scattering concerning the existence of impurities one can eliminate by improvement of growth technologies that scattering caused by interplay between quasiparticles one cannot eliminate in principle, even at absolute zero temperature. Therefore, we focus our attention on electron-phonon interaction in. quantum dots