• DocumentCode
    1881791
  • Title

    Performance evaluation of high voltage super junction MOSFETs for zero-voltage soft-switching inverter applications

  • Author

    Park, Sung-Yeul ; Sun, Pengwei ; Yu, Wensong ; Lai, Jih-Sheng

  • Author_Institution
    Center for Clean Energy Eng. Storrs, Univ. of Connecticut, Storrs, CT, USA
  • fYear
    2010
  • fDate
    21-25 Feb. 2010
  • Firstpage
    387
  • Lastpage
    391
  • Abstract
    This paper evaluates three different 600V-level super junction (SJ) MOSFETs employed in zero-voltage soft-switching inverter applications. Inverter efficiency was measured and compared with the same inverter test setup by only changing different MOSFETs. Besides high efficiency requirement, better switching performance is also highly appreciated in various inverter applications. Comparison test was done on each super junction MOSFET to investigate its body diode reverse recovery and associated problems. Based on performance of both efficiency and reverse recovery related issues, a high voltage super junction MOSFET selection for soft-switching inverter was suggested.
  • Keywords
    invertors; power MOSFET; body diode reverse recovery; high voltage super junction MOSFET; inverter efficiency measurement; performance evaluation; voltage 600 V; zero-voltage soft-switching inverter application; Diodes; Electromagnetic interference; Immune system; Inverters; MOSFETs; Magnetic resonance; Microelectronics; Power engineering and energy; Testing; Zero voltage switching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applied Power Electronics Conference and Exposition (APEC), 2010 Twenty-Fifth Annual IEEE
  • Conference_Location
    Palm Springs, CA
  • ISSN
    1048-2334
  • Print_ISBN
    978-1-4244-4782-4
  • Electronic_ISBN
    1048-2334
  • Type

    conf

  • DOI
    10.1109/APEC.2010.5433641
  • Filename
    5433641