Direct extraction of SPICE level 3 parameters without using optimization

Author

Matsuda, Jun-ichi

Author_Institution

Sanyo Electric Co. Ltd., Gunma, Japan

fYear

1993

fDate

22-25 Mar 1993

Firstpage

3

Lastpage

8

Abstract

Direct extraction methods for X_j, V _t0, V_max and κ in SPICE level 3 parameters have been developed to control the parameter scatters caused by variations in the fabrication process. When using the parameter values extracted with these methods, the simulated current-voltage characteristics of a short-channel MOSFET device fit the measured ones accurately. The values obtained are almost the same as can be obtained using optimized parameter values. Since the parameter values extracted reflect the scatters directly, the methods are effective for use in such circuit designs

Keywords

MOS integrated circuits; SPICE; circuit CAD; insulated gate field effect transistors; network parameters; SPICE level 3 parameters; circuit designs; current-voltage characteristics; direct extraction; fabrication process; parameter scatters; short-channel MOSFET; Circuit synthesis; Current measurement; Electrical resistance measurement; Fabrication; Large scale integration; MOSFET circuits; SPICE; Scattering parameters; Search methods; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1993. ICMTS 1993. Proceedings of the 1993 International Conference on

Conference_Location

Sitges

Print_ISBN

0-7803-0857-3

Type

conf

DOI

10.1109/ICMTS.1993.292902

Filename

292902