Low cost UTSi technology for RF wireless applications

Author

Megahed, M. ; Burgener, M. ; Cable, J. ; Benton, R. ; Staab, D. ; Stuber, M. ; Dennies, P. ; Reedy, R.

Author_Institution

Peregrine Semicond. Corp., San Diego, CA, USA

Volume

2

fYear

1998

fDate

7-12 June 1998

Firstpage

981

Abstract

Ultra Thin Silicon (UTSi) IC technology has been developed for RF, analog, and digital signal applications. The technology is based on low cost CMOS VLSI technology with fully integrated passive components. The insulating substrate provides high isolation and high quality passive components, paving the way for on-chip matching elements. For the first time, excellent high-speed/high-frequency performance is simultaneously demonstrated by the highly integrated UTSi technology.

Keywords

CMOS integrated circuits; VLSI; isolation technology; mobile communication; semiconductor thin films; CMOS VLSI technology; RF wireless applications; Si; fully integrated passive components; high-frequency performance; high-speed performance; isolation; low cost UTSi technology; on-chip matching elements; ultra thin silicon IC technology; Analog integrated circuits; Application specific integrated circuits; CMOS technology; Costs; Digital integrated circuits; Isolation technology; RF signals; Radio frequency; Radiofrequency integrated circuits; Silicon on insulator technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1998 IEEE MTT-S International

Conference_Location

Baltimore, MD, USA

ISSN

0149-645X

Print_ISBN

0-7803-4471-5

Type

conf

DOI

10.1109/MWSYM.1998.705156

Filename

705156