High frequency performance of Sb-heterostructure millimeter-wave diodes

Author

Schulman, J.N. ; Thomas, S. ; Chow, D.H. ; Croke, E.T. ; Dunlap, H.L. ; Holabird, K.S. ; Clark, W.M. ; Morgan, M.A. ; Weinreb, S.

Author_Institution

HRL Labs., Malibu, CA, USA

fYear

2002

fDate

2002

Firstpage

151

Lastpage

154

Abstract

We have developed a new zero bias millimeter wave diode based on quantum tunneling in an InAs/AlSb/GaSb nanostructure. It is ideal for square law radiometry and passive millimeter wave imaging. Excellent sensitivity has been demonstrated at present up to 110 GHz, with higher bandwidth predicted for smaller area diodes.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; millimetre wave detectors; millimetre wave diodes; millimetre wave imaging; radiometry; semiconductor device measurement; sensitivity; tunnelling; 110 GHz; EHF; InAs-AlSb-GaSb; InAs/AlSb/GaSb nanostructure; Sb-heterostructure diode; bandwidth; high frequency performance; millimeter wave diode; passive MM-wave imaging; quantum tunneling; sensitivity; square law radiometry; zero bias MM-wave diode; zero bias direct detection; Frequency; Laboratories; Local oscillators; Millimeter wave technology; Millimeter wave transistors; Reproducibility of results; Semiconductor diodes; Space exploration; Tunneling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

ISSN

1092-8669

Print_ISBN

0-7803-7320-0

Type

conf

DOI

10.1109/ICIPRM.2002.1014164

Filename

1014164