Title :
Limitations of electrical test information: a case study with polysilicon emitter contacts
Author :
Johnson, Molly ; Strojwas, A.J. ; Greve, D.W. ; Reuss, R.A. ; Flowers, A.
Author_Institution :
Carnegie Mellon Univ., Pittsburgh, PA, USA
Abstract :
It is shown in two case studies on polysilicon emitter contacts that electrical measurements are not sufficient on their own to understand observed variations in the devices under study. Combined with physical information from transmission electron microscopy (TEM) and secondary ion mass spectroscopy (SIMS) it is possible to see more clearly links between processing, structure, and electrical performance. Both interfacial oxide effects and emitter dose effects are discussed
Keywords :
bipolar transistors; secondary ion mass spectroscopy; semiconductor device testing; transmission electron microscopy; Si; electrical test information; emitter dose effects; interfacial oxide effects; polysilicon emitter contacts; secondary ion mass spectroscopy; transmission electron microscopy; Annealing; Circuit synthesis; Circuit testing; Computer aided software engineering; Contacts; Electric variables measurement; Electrical resistance measurement; Furnaces; Instruments; Manufacturing;
Conference_Titel :
Microelectronic Test Structures, 1993. ICMTS 1993. Proceedings of the 1993 International Conference on
Conference_Location :
Sitges
Print_ISBN :
0-7803-0857-3
DOI :
10.1109/ICMTS.1993.292913
