• DocumentCode
    1882159
  • Title

    Mullite ceramic substrate for thin-film application

  • Author

    Kurihara, Takashi ; Horiuchi, Michio ; Takeuchi, Yukiharu ; Wakabayashi, Shin-ichi

  • Author_Institution
    Shinko Electr. Ind. Co. Ltd., Nagano-City, Japan
  • fYear
    1990
  • fDate
    20-23 May 1990
  • Firstpage
    68
  • Abstract
    The advantages of mullite ceramic for thin-film application are examined. Using homogeneous powder, a dense mullite substrate consisting of fine mullite grains was provided without the addition of a sintering aid. The properties obtained are superior to those of the mullite presented by M. Horiuchi et al. (1988) and a conventional alumina for application to packages and substrates: low dielectric constant (6.8), a thermal expansion coefficient (4.4×10-6/°C) close to that of silicon, high flexural strength (302 MPa), and ease of polishing due to low hardness (10 GPa). Thin-film processes were applied to the mullite substrate. Chromium, copper, and nickel layers were sputter-deposited, followed by gold electroplating. The adhesion strength seems to be affected by the surface smoothness of the substrate. Pulse-propagation velocities and characteristic impedances of a coplanar line patterned on the substrates were measured. Tungsten via metallization was found to be cofireable with the mullite. This is advantageous for providing a package with high wiring density
  • Keywords
    adhesion; alumina; ceramics; packaging; powder technology; silicon compounds; sol-gel processing; substrates; thin film circuits; Al2O3-SiO2; Al2O3-SiO2-MgO; Au electroplating; Cr layers; Cu layers; Ni layers; adhesion strength; ceramic substrate; characteristic impedances; coplanar line; dense mullite substrate; fine mullite grains; high flexural strength; high wiring density; homogeneous powder; low dielectric constant; low hardness; package; pulse propagation velocities; smoothness; sol-gel method; thermal expansion coefficient; thin-film application; Ceramics; Dielectric constant; Dielectric substrates; Dielectric thin films; Packaging; Powders; Pulse measurements; Silicon; Thermal expansion; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference, 1990. ., 40th
  • Conference_Location
    Las Vegas, NV
  • Type

    conf

  • DOI
    10.1109/ECTC.1990.122170
  • Filename
    122170