DocumentCode
1882300
Title
Thermal measurements by use of a SBIMOS diode matrix
Author
Geeraerts, B. ; Van Petegem, W. ; Sansen, W.
fYear
1993
fDate
22-25 Mar 1993
Firstpage
183
Lastpage
187
Abstract
The diode matrix is shown to be an excellent tool for determining thermal constants and temperature distributions on chip. This information can be used to evaluate the electro-thermal simulator and to provide designers with more practical guidelines in designing chips with tight temperature specification. Temperature related problems on chip, such as offset voltage due to temperature gradients and maximum allowable temperature, can now be modeled adequately
Keywords
MOS integrated circuits; circuit CAD; digital simulation; power integrated circuits; SBIMOS diode matrix; electro-thermal simulator; maximum allowable temperature; offset voltage; temperature distributions; temperature gradients; temperature specification; thermal constants; Calibration; Circuit simulation; Decoding; Diodes; Electromagnetic measurements; Process design; Resistors; Semiconductor device measurement; Temperature sensors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures, 1993. ICMTS 1993. Proceedings of the 1993 International Conference on
Conference_Location
Sitges
Print_ISBN
0-7803-0857-3
Type
conf
DOI
10.1109/ICMTS.1993.292923
Filename
292923
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