Title :
Photoemission characteristics of reverse-breakdown n+-diodes with LOCOS- and trench-isolation
Author :
Ohzone, Takashi ; Iwata, Hideyuki
Author_Institution :
Dept. of Electron. & Inf., Toyama Prefectural Univ., Toyama, Japan
Abstract :
Photoemission-intensity profiles and photoemission images, with and without an optical filter, and anisotropic characteristics of the photon count from a reverse-biased n+-diode fabricated by local oxidation of silicon (LOCOS)- and trench-isolation are measured. Similar profiles are observed independently on the emitted photon energies. The fluctuations of the experimental results are relatively larger in trench-isolated diodes than those in LOCOS-isolated ones. The fluctuations decrease as the reverse current increases
Keywords :
avalanche diodes; oxidation; photoemission; semiconductor technology; LOCOS-isolated; anisotropic characteristics; local oxidation of silicon; optical filter; photoemission images; photoemission-intensity profiles; photon energies; reverse current; reverse-breakdown n+-diodes; trench-isolation; Anisotropic magnetoresistance; Degradation; Diodes; Electric breakdown; Fluctuations; Microscopy; Optical filters; Photoelectricity; Testing; Voltage;
Conference_Titel :
Microelectronic Test Structures, 1993. ICMTS 1993. Proceedings of the 1993 International Conference on
Conference_Location :
Sitges
Print_ISBN :
0-7803-0857-3
DOI :
10.1109/ICMTS.1993.292924
