• DocumentCode
    1882323
  • Title

    Photoemission characteristics of reverse-breakdown n+-diodes with LOCOS- and trench-isolation

  • Author

    Ohzone, Takashi ; Iwata, Hideyuki

  • Author_Institution
    Dept. of Electron. & Inf., Toyama Prefectural Univ., Toyama, Japan
  • fYear
    1993
  • fDate
    22-25 Mar 1993
  • Firstpage
    177
  • Lastpage
    182
  • Abstract
    Photoemission-intensity profiles and photoemission images, with and without an optical filter, and anisotropic characteristics of the photon count from a reverse-biased n+-diode fabricated by local oxidation of silicon (LOCOS)- and trench-isolation are measured. Similar profiles are observed independently on the emitted photon energies. The fluctuations of the experimental results are relatively larger in trench-isolated diodes than those in LOCOS-isolated ones. The fluctuations decrease as the reverse current increases
  • Keywords
    avalanche diodes; oxidation; photoemission; semiconductor technology; LOCOS-isolated; anisotropic characteristics; local oxidation of silicon; optical filter; photoemission images; photoemission-intensity profiles; photon energies; reverse current; reverse-breakdown n+-diodes; trench-isolation; Anisotropic magnetoresistance; Degradation; Diodes; Electric breakdown; Fluctuations; Microscopy; Optical filters; Photoelectricity; Testing; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronic Test Structures, 1993. ICMTS 1993. Proceedings of the 1993 International Conference on
  • Conference_Location
    Sitges
  • Print_ISBN
    0-7803-0857-3
  • Type

    conf

  • DOI
    10.1109/ICMTS.1993.292924
  • Filename
    292924
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1882323