On the reverse IV-characteristics of Schottky diodes on n-GaN

In this investigation the I/V and C/V characteristics of Schottky diodes on uniformly n-doped GaN grown on sapphire are analyzed in the bias and temperature regime. Since the barrier height of metal-GaN contacts depends strongly on the work function differences, two Schottky barrier materials with high work function difference to GaN and thus high barrier height have been considered: (A) Pt with a barrier height to n-doped GaN of approx. Φ_B=1.1 eV and (B) degenerately p⁺-doped Si in a “Schottky barrier-like” configuration