Title :
SPICE DC parameter extraction of MESFETs with diffused and grown channel
Author :
Lujan, Alexandre S. ; Chueiri, Ivan ; Swart, Jacobus W. ; Prince, Franclsco C. ; Tessari, P.H.
Author_Institution :
UNICAMP, State Univ. of Campinas, Sao Paulo, Brazil
Abstract :
A procedure for extracting SPICE (simulation program with IC emphasis) DC parameters of GaAs MESFETs is presented. The program developed produces a best fitting of the calculated I-V curves to the experimental characteristics. Devices are fabricated by means of two different processes producing different channel doping structures and different channel length devices. Extracted parameters of these devices are presented and analyzed
Keywords :
III-V semiconductors; SPICE; Schottky gate field effect transistors; digital simulation; doping profiles; semiconductor device models; DC parameter extraction; GaAs; I-V curves; MESFETs; SPICE; channel doping structures; channel length devices; diffused channel; Current measurement; Data mining; Electrical resistance measurement; Fitting; Linear regression; MESFETs; Parameter extraction; SPICE; Testing; Voltage;
Conference_Titel :
Microelectronic Test Structures, 1993. ICMTS 1993. Proceedings of the 1993 International Conference on
Conference_Location :
Sitges
Print_ISBN :
0-7803-0857-3
DOI :
10.1109/ICMTS.1993.292927
