Semiconductor losses in voltage source and current source IGBT converters based on analytical derivation

A crucial criterion for the dimensioning of three phase PWM converters is the cooling of the power semiconductors and thus determination of power dissipation in the semiconductors at certain operating points and its maximum. Methods for the calculation and simulation of semiconductor losses in the most common voltage source and current source three phase PWM converters are well known. Here a complete analytical calculation of the power semiconductor losses for both converter types is presented, most parts are already known, some parts are developed here, as far as the authors know. Conduction losses as well as switching losses are included in the calculation using a simplified model, based on power semiconductor data sheet information. This approach should benefit the prediction and further investigations of the performance of power semiconductor losses for both kinds of converters. Results of the calculation are shown. Dependencies of the semiconductor power losses on the type of converter, the operating point and the pulse width modulation are pointed out, showing the general behaviour of power losses for both converter types.