• DocumentCode
    1883550
  • Title

    Plasma chemical etching of silicon in chlorine to containing plasma, used in nanoelectronics

  • Author

    Bogomolov, Boris K.

  • Author_Institution
    Novosibirsk State Tech. Univ., Novosibirsk, Russia
  • fYear
    2010
  • fDate
    22-24 Sept. 2010
  • Firstpage
    23
  • Lastpage
    29
  • Abstract
    It is experimentally confirmed that transition a topokinetic stage plasma of chemical etching of silicon in diffusion occurs around a maximum of dependence of speed of etching from the oxygen maintenance in plasma CF2Cl2/O2. The load effect is studied. Results of article well correlate with the data received in the reactor of high density plasma TCP 2300 Versys Kiyo LAM Research corporations.
  • Keywords
    carbon compounds; chlorine compounds; fluorine compounds; nanoelectronics; silicon; sputter etching; CF2Cl2-O2; chlorine; nanoelectronics; oxygen maintenance; plasma chemical etching; silicon; topokinetic stage plasma; Artificial neural networks; Etching; Fluctuations; Oxygen; RNA; Silicon; Nanoelectronics; Plasma etching; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Actual Problems of Electronic Instrument Engineering (APEIE), 2010 10th International Scientific-Technical Conference on
  • Conference_Location
    Novosibirsk
  • Print_ISBN
    978-1-4244-8209-2
  • Electronic_ISBN
    978-1-4244-8210-8
  • Type

    conf

  • DOI
    10.1109/APEIE.2010.5677337
  • Filename
    5677337
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1883550