DocumentCode
1883608
Title
Comparison of bi-directional switch components for direct AC-AC converters
Author
Bland, M.J. ; Wheeler, P.W. ; Clare, J.C. ; Empringham, L.
Author_Institution
Nottingham Univ., UK
Volume
4
fYear
2004
fDate
2004
Firstpage
2905
Abstract
The objective of this paper is to assess the performance of bi-directional switch components for direct AC-AC (matrix) converter applications. Three 2-phase to 1-phase matrix converters will be constructed, each with different bidirectional switch components. The three bi-directional switch structures to be considered are: silicon (Si) diode-Si IGBT, silicon carbide (SiC) diode-Si IGBT and Si reverse blocking IGBT (RB-IGBT). All of the commutation scenarios possible in a matrix converter topology using two or four-step commutation are studied. The improved reverse recovery performance of the SiC Schottky diodes is assessed with reference to measured switching waveforms. The affect of the three different switch structures on the overall performance of the matrix converter with particular attention to power circuit losses is investigated.
Keywords
AC-AC power convertors; Schottky diodes; insulated gate bipolar transistors; matrix convertors; power semiconductor diodes; Schottky diode; bidirectional switch component; commutation; converter topology; direct AC-AC converter; matrix converter; power circuit loss; reverse blocking IGBT; silicon carbide diode IGBT; silicon diode IGBT; Bidirectional control; Circuit topology; Insulated gate bipolar transistors; Matrix converters; Performance loss; Schottky diodes; Silicon carbide; Switches; Switching circuits; Switching converters;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 2004. PESC 04. 2004 IEEE 35th Annual
ISSN
0275-9306
Print_ISBN
0-7803-8399-0
Type
conf
DOI
10.1109/PESC.2004.1355295
Filename
1355295
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