• DocumentCode
    1883608
  • Title

    Comparison of bi-directional switch components for direct AC-AC converters

  • Author

    Bland, M.J. ; Wheeler, P.W. ; Clare, J.C. ; Empringham, L.

  • Author_Institution
    Nottingham Univ., UK
  • Volume
    4
  • fYear
    2004
  • fDate
    2004
  • Firstpage
    2905
  • Abstract
    The objective of this paper is to assess the performance of bi-directional switch components for direct AC-AC (matrix) converter applications. Three 2-phase to 1-phase matrix converters will be constructed, each with different bidirectional switch components. The three bi-directional switch structures to be considered are: silicon (Si) diode-Si IGBT, silicon carbide (SiC) diode-Si IGBT and Si reverse blocking IGBT (RB-IGBT). All of the commutation scenarios possible in a matrix converter topology using two or four-step commutation are studied. The improved reverse recovery performance of the SiC Schottky diodes is assessed with reference to measured switching waveforms. The affect of the three different switch structures on the overall performance of the matrix converter with particular attention to power circuit losses is investigated.
  • Keywords
    AC-AC power convertors; Schottky diodes; insulated gate bipolar transistors; matrix convertors; power semiconductor diodes; Schottky diode; bidirectional switch component; commutation; converter topology; direct AC-AC converter; matrix converter; power circuit loss; reverse blocking IGBT; silicon carbide diode IGBT; silicon diode IGBT; Bidirectional control; Circuit topology; Insulated gate bipolar transistors; Matrix converters; Performance loss; Schottky diodes; Silicon carbide; Switches; Switching circuits; Switching converters;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics Specialists Conference, 2004. PESC 04. 2004 IEEE 35th Annual
  • ISSN
    0275-9306
  • Print_ISBN
    0-7803-8399-0
  • Type

    conf

  • DOI
    10.1109/PESC.2004.1355295
  • Filename
    1355295