Title :
SRAM stability characterization using tunable ring oscillators in 45nm CMOS
Author :
Tsai, Jui-che ; Seng Oon Toh ; Zheng Guo ; Liang-Teck Pang ; Tsu-Jae King Liu ; Nikolic, B.
Author_Institution :
Univ. of California, Berkeley, CA, USA
Abstract :
A method to characterize distributions of read and write margins of an SRAM array using tunable ring oscillators (ROs) is presented. A 45nm CMOS testchip demonstrates a write RO with frequency that correlates well with static wordline write-trip voltage and a read RO that that correlates well with the static-current noise margin as well as with the cell read current.
Keywords :
CMOS memory circuits; SRAM chips; CMOS; SRAM stability characterization; cell read current; size 45 nm; static wordline write-trip voltage; static-current noise; tunable ring oscillators; Circuit noise; Current measurement; Frequency conversion; Frequency measurement; Inverters; Random access memory; Ring oscillators; Stability; Switches; Voltage;
Conference_Titel :
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-6033-5
DOI :
10.1109/ISSCC.2010.5433820
