DocumentCode :
1883647
Title :
The reliability of AlN power hybrids using Cu thick film conductive
Author :
Bloom, Terry R.
Author_Institution :
CTS Corp., Elkhart, IN, USA
fYear :
1990
fDate :
20-23 May 1990
Firstpage :
111
Abstract :
A power hybrid construction using AlN substrates, copper thick-film conductives, and a power chip has been evaluated. Tests included aged adhesion of the copper thick film, thermal conductivity of the substrate, thermal conductivity of the hybrid, thermal shock of the hybrid, and power cycling of the hybrid. It was found that a copper thick-film conductive can be made to adhere well to AlN. A wire-bondable copper thick-film conductive is possible, but presently needs some work. In this construction, an AlN 170 w/mk substrate will dissipate almost twice the power of a 96% Al2O3 substrate and maintain the same chip temperature. The AlN units are good for 10000 cycles of thermal shock; the Al2O3 are not. For the same construction, the AlN units can handle over four times the power cycles of the Al2O3 units. The solder thickness between the chip and the conductive is a major factor in power-cycle reliability
Keywords :
adhesion; aluminium compounds; circuit reliability; copper; hybrid integrated circuits; packaging; power integrated circuits; substrates; thermal conductivity of solids; thermal shock; AlN substrates; Cu thick film conductive; Cu-AlN; aged adhesion; power chip; power cycling; power hybrid construction; reliability; solder thickness; thermal conductivity; thermal shock; Aging; Bonding; Copper; Substrates; Temperature; Testing; Thermal conductivity; Thermal expansion; Thick films; Wire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference, 1990. ., 40th
Conference_Location :
Las Vegas, NV
Type :
conf
DOI :
10.1109/ECTC.1990.122176
Filename :
122176
Link To Document :
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