• DocumentCode
    1883647
  • Title

    The reliability of AlN power hybrids using Cu thick film conductive

  • Author

    Bloom, Terry R.

  • Author_Institution
    CTS Corp., Elkhart, IN, USA
  • fYear
    1990
  • fDate
    20-23 May 1990
  • Firstpage
    111
  • Abstract
    A power hybrid construction using AlN substrates, copper thick-film conductives, and a power chip has been evaluated. Tests included aged adhesion of the copper thick film, thermal conductivity of the substrate, thermal conductivity of the hybrid, thermal shock of the hybrid, and power cycling of the hybrid. It was found that a copper thick-film conductive can be made to adhere well to AlN. A wire-bondable copper thick-film conductive is possible, but presently needs some work. In this construction, an AlN 170 w/mk substrate will dissipate almost twice the power of a 96% Al2O3 substrate and maintain the same chip temperature. The AlN units are good for 10000 cycles of thermal shock; the Al2O3 are not. For the same construction, the AlN units can handle over four times the power cycles of the Al2O3 units. The solder thickness between the chip and the conductive is a major factor in power-cycle reliability
  • Keywords
    adhesion; aluminium compounds; circuit reliability; copper; hybrid integrated circuits; packaging; power integrated circuits; substrates; thermal conductivity of solids; thermal shock; AlN substrates; Cu thick film conductive; Cu-AlN; aged adhesion; power chip; power cycling; power hybrid construction; reliability; solder thickness; thermal conductivity; thermal shock; Aging; Bonding; Copper; Substrates; Temperature; Testing; Thermal conductivity; Thermal expansion; Thick films; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference, 1990. ., 40th
  • Conference_Location
    Las Vegas, NV
  • Type

    conf

  • DOI
    10.1109/ECTC.1990.122176
  • Filename
    122176