Title :
A 500 MHz GaAs digital RF memory modulator IC
Author :
McMillian, G. ; Hallidy, W. ; Hood, M. ; Phan, G. ; Tan Chu ; Kim Lau ; Lawrence, M. ; Tnrailkill, B. ; Phan, J. ; Lee, A. ; Musgrove, C. ; Sanders, M. ; Morgan, A. ; Schmidt, G. ; Zreet, G.
Author_Institution :
SPEC, Austin, TX, USA
Abstract :
A single chip digital radio frequency memory (DRFM) modulator provides time delay, Doppler shifting, and phase/amplitude modulation of RF signals. The digital IC has been implemented in Vitesse Semiconductor´s H-GaAs III technology for operation up to 500 MHz, and was designed with COMPASS Design Automation´s CAE tools and SPEC´s standard cell libraries.
Keywords :
III-V semiconductors; MESFET integrated circuits; UHF integrated circuits; amplitude modulation; application specific integrated circuits; circuit CAD; delay circuits; digital signal processing chips; electronic countermeasures; field effect digital integrated circuits; gallium arsenide; modulators; phase modulation; 500 MHz; COMPASS Design Automation CAE tools; Doppler shifting; GaAs; GaAs digital RF memory modulator IC; RF signals; SPEC standard cell libraries; Vitesse Semiconductor H-GaAs III technology; amplitude modulation; electronic countermeasures; phase modulation; single chip digital radio frequency memory modulator; time delay; Amplitude modulation; Delay effects; Digital communication; Digital integrated circuits; Digital modulation; Frequency modulation; Gallium arsenide; Phase modulation; Radio frequency; Radiofrequency integrated circuits;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1996. Technical Digest 1996., 18th Annual
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-3504-X
DOI :
10.1109/GAAS.1996.567734
