Title :
IGBT operation at cryogenic temperatures: non-punch-through and punch-through comparison
Author :
Caiafa, A. ; Snezhko, A. ; Hudgins, J.L. ; Santi, E. ; Prozorov, R.
Author_Institution :
Dept. of Electr. Eng., South Carolina Univ., Columbia, SC, USA
Abstract :
Detailed experimental data taken for punch through (PT) and non punch through (NPT) IGBTs are presented. The test program covered IGBT devices rated for 100-600 A and 600-1200 V from different manufacturers. The forward conduction drops and switching behavior of the IGBTs are examined over a temperature range of 4.2 to 295 K. Physical behavior at low junction temperatures is analyzed. Different behavior of the two structures at cryogenic temperatures is highlighted and the better performances of the NPT technology are shown.
Keywords :
cryogenic electronics; insulated gate bipolar transistors; power semiconductor switches; 100 to 600 A; 4.2 to 295 K; 600 to 1200 V; cryogenic temperature; forward conduction drop; nonpunch-through IGBT; punch-through IGBT; switching behavior; Cryogenics; Insulated gate bipolar transistors; Power electronics; Steel; Superconducting logic circuits; Superconducting magnetic energy storage; Superconducting materials; Temperature; Thermal conductivity; Voltage;
Conference_Titel :
Power Electronics Specialists Conference, 2004. PESC 04. 2004 IEEE 35th Annual
Print_ISBN :
0-7803-8399-0
DOI :
10.1109/PESC.2004.1355305
