The failure of punch-through IGBTs to reach forward conduction mode at low temperatures

Author

Caiafa, A. ; Snezhko, A. ; Hudgins, J.L. ; Santi, E. ; Prozorov, R.

Author_Institution

Dept. of Electr. Eng., South Carolina Univ., Columbia, SC, USA

Volume

4

fYear

2004

fDate

2004

Firstpage

2967

Abstract

The failure of punch-through (PT) IGBTs to reach forward conduction mode at cryogenic temperatures has already been observed in previous work, but no explanation has been given. In this work detailed experimental data collected for PT IGBTs are presented. The forward conduction drops and switching behavior of the IGBTs are examined over a temperature range from 4.2 to 295 K. The phenomenon under analysis is presented. Connections between the failure of PT-IGBTs and other phenomena are highlighted. Physical behavior at low junction temperatures is analyzed and the failure at cryogenic temperatures is discussed and analyzed.

Keywords

cryogenic electronics; insulated gate bipolar transistors; 4.2 to 295 K; cryogenic temperature; forward conduction drop; forward conduction mode; punch-through IGBT; switching behavior; Cryogenics; Extraterrestrial measurements; Failure analysis; Insulated gate bipolar transistors; Probes; Superconducting cables; Superconducting magnetic energy storage; Superconducting materials; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Specialists Conference, 2004. PESC 04. 2004 IEEE 35th Annual

ISSN

0275-9306

Print_ISBN

0-7803-8399-0

Type

conf

DOI

10.1109/PESC.2004.1355306

Filename

1355306