• DocumentCode
    1883914
  • Title

    Effect of doping concentration on electrical and spectral properties of doped glasses

  • Author

    Bishnoi, N.B. ; Sharma, Yogesh K. ; Surana, S.S.L. ; Tandon, S.P.

  • Author_Institution
    Nehru Degree College
  • fYear
    1994
  • fDate
    24-29 July 1994
  • Firstpage
    110
  • Lastpage
    110
  • Abstract
    Summary form only given. The glasses doped with higher concentration of Transition metal (TM) ions have found important application in semiconducting, memory and switching devices [1]. However, low concentration of certain TM ions are equally important for their use as sensitizer in rare earth doped glasses having great potentiality for laser action [2]. Recently we have reported similar studies for Cr/sup 3+/ in phosphate and chlorophosphate glasses [3]. In this paper the dc conductvity in the temperature range (343-503K) has been studied for Co/sup 2+/ doped phosphate and chlorophosphate glasses (doping concentration are: 0.1, 0.2, 0.3, 0.4, and 0.5 mol%). The observed absorption bands In the region 350-800 nm have been assigned to different transition assuming an octahedral symmetry.
  • Keywords
    Bridges; Chromium; Doping; Educational institutions; Elementary particle exchange interactions; Glass; Physics; Polymers; Semiconductivity; Temperature distribution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Science and Technology of Synthetic Metals, 1994. ICSM '94. International Conference on
  • Conference_Location
    Seoul, Korea
  • Type

    conf

  • DOI
    10.1109/STSM.1994.834835
  • Filename
    834835