Subfemtojoule 0.15 /spl mu/m InGaP/InGaAs/GaAs pseudomorphic HEMT DCFL circuits under 1 V supply voltage

Author

Suehiro, H. ; Shima, M. ; Shimura, T. ; Hara, N.

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

fYear

1996

fDate

3-6 Nov. 1996

Firstpage

77

Lastpage

80

Abstract

We have fabricated side-wall assisted 0.15 /spl mu/m T-shaped gate pseudomorphic HEMT DCFL circuits with InGaP donor layers and obtained 22.3 ps basic delay and 0.8 fJ power-delay products at a supply voltage Vdd of 0.6 V with the driver gate width of 2 /spl mu/m. A master-slave type divide-by-two frequency divider which consists of eight 2-input NAND gates using a dual gate electrode structure shows stable operation of 10 GHz toggle frequency with a power consumption of 4.5 mW at Vdd of 0.8 V.

Keywords

HEMT integrated circuits; III-V semiconductors; NAND circuits; circuit stability; delays; direct coupled FET logic; field effect logic circuits; frequency dividers; gallium arsenide; gallium compounds; indium compounds; 0.15 mum; 0.6 V; 0.8 V; 0.8 fJ; 10 GHz; 2 mum; 2-input NAND gates; 22.3 ps; 4.5 mW; InGaP donor layer; InGaP-InGaAs-GaAs; InGaP/InGaAs/GaAs pseudomorphic HEMT DCFL circuits; delay; driver gate width; dual gate electrode structure; master-slave type divide-by-two frequency divider; power consumption; power-delay product; side-wall assisted T-shaped gate pseudomorphic HEMT DCFL circuits; stable operation; supply voltage; toggle frequency; Delay; Driver circuits; Electrodes; Energy consumption; Frequency conversion; Gallium arsenide; Indium gallium arsenide; Master-slave; PHEMTs; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1996. Technical Digest 1996., 18th Annual

Conference_Location

Orlando, FL, USA

ISSN

1064-7775

Print_ISBN

0-7803-3504-X

Type

conf

DOI

10.1109/GAAS.1996.567741

Filename

567741