Title :
Modeling vertical channel junction field effect devices in silicon carbide
Author :
Kashyap, Avinash S. ; Ramavarapu, F. Rasanna L ; Maganlal, Sharmila ; McNutt, Ty R. ; Lostetter, Alexander B. ; Mantooth, H. Alan
Author_Institution :
Arkansas Univ., Fayetteville, AR, USA
Abstract :
The electrical characterization and model development for silicon carbide (SiC) vertical channel SIT and JFET structures are presented in this work. A compact model is developed based on the device geometry and SiC material properties. Northrop Grumman validates the model against measured data at 25 °C and 100 °C for a prototype 0.03 cm2 SiC SIT provided. The model´s on-state and transient characteristics are validated over this temperature range. Validation of the model shows excellent agreement with measured data. The physics-based approach implemented in this model is crucial to describing the transient behavior over a wide range of application conditions and temperature ranges.
Keywords :
junction gate field effect transistors; semiconductor device models; silicon compounds; static induction transistors; 100 degC; 25 degC; JFET; SiC; physics-based approach; silicon carbide vertical channel SIT; transient behavior; vertical channel junction field effect device; Breakdown voltage; Capacitance; Contact resistance; Equations; MOSFETs; Semiconductor materials; Silicon carbide; Temperature distribution; Thermal conductivity; Thermal resistance;
Conference_Titel :
Power Electronics Specialists Conference, 2004. PESC 04. 2004 IEEE 35th Annual
Print_ISBN :
0-7803-8399-0
DOI :
10.1109/PESC.2004.1355314
