Title :
InP double heterojunction bipolar transistors with chirped InGaAs/InP superlattice base-collector junction grown by CBE
Author :
Yang, K. ; Munns, G.O. ; East, J.R. ; Haddad, G.I.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
InP DHBT´s with a chirped InGaAs/InP superlattice B-C junction, which were grown by CBE, have been fabricated and characterized. The B-C junction of the DHBT was graded with a 10-period InGaAs/InP chirped superlattice (CSL) between the InGaAs base and the lightly doped InP collector. A delta-doped thin layer was included at the end of the CSL to offset the quasielectric field arising from the grade and suppress further the carrier blocking effect across the B-C heterojunction. The InP/InGaAs CSL DHBT with a 6000 Å-thick InP collector demonstrated a high BVCEO of 18.3 V and a BVBCO of 22.8 V with a typical current gain of 55. Maximum cutoff frequencies of fmax =146 GHz and fT=71 GHz were obtained from the fabricated single-finger 2×10 μm2-emitter DHBT. The devices with different emitter dimensions were also fabricated and characterized
Keywords :
III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor superlattices; CBE growth; InGaAs-InP; InP; InP double heterojunction bipolar transistor; carrier blocking; chirped InGaAs/InP superlattice base-collector junction; current gain; cutoff frequency; delta-doped thin layer; graded junction; quasielectric field; single-finger DHBT; Heterojunction bipolar transistors;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1997. Proceedings., 1997 IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-3970-3
DOI :
10.1109/CORNEL.1997.649368
