DocumentCode
1884228
Title
Advanced memory technologies for space and missile systems applications
Author
Doyle, Scott ; Ross, Jason ; Sturcken, Keith
Author_Institution
BAE Syst., Manassas, VA, USA
fYear
2012
fDate
3-10 March 2012
Firstpage
1
Lastpage
8
Abstract
Technology status and qualification test results are discussed on two new deep submicron radiation hardened devices including a 64Mb SRAM family and stacked MCM versions of the C-RAM non-volatile memory. Electrical characterization and radiation test results will be discussed.
Keywords
missiles; radiation hardening (electronics); random-access storage; space vehicle electronics; C-RAM nonvolatile memory; SRAM family; advanced memory technologies; deep submicron radiation hardened devices; electrical characterization; missile systems applications; radiation test; space applications; stacked MCM; CMOS integrated circuits; Computer architecture; Microprocessors; Packaging; Radiation hardening; Random access memory; Timing;
fLanguage
English
Publisher
ieee
Conference_Titel
Aerospace Conference, 2012 IEEE
Conference_Location
Big Sky, MT
ISSN
1095-323X
Print_ISBN
978-1-4577-0556-4
Type
conf
DOI
10.1109/AERO.2012.6187231
Filename
6187231
Link To Document