Title :
Silicon ultraviolet detectors and modelling
Author :
Durant, N.M. ; Fox, N.P.
Author_Institution :
Div. of Quantum Metrol., Nat. Phys. Lab., Teddington, UK
Abstract :
For ultraviolet radiation the use of silicon photodiodes is limited to specific measured wavelengths because of the difficulties involved with interpolation in that spectral region. The authors assess the feasibility of modelling the behaviour of silicon photodiodes sufficiently well to enable accurate interpolation and to associate uncertainties to the use of models describing the operation of silicon photodiodes in the ultraviolet
Keywords :
carrier mobility; doping profiles; electron traps; elemental semiconductors; interface electron states; minority carriers; photodiodes; semiconductor device models; silicon; ultraviolet detectors; PC 1D simulator; Si; Si-SiO2; SiO2 coating; absorption coefficient; doping profile; elemental semiconductor; interface trapped charge; interpolation; minority carrier mobility; modelling; photodiodes; quantum field; ultraviolet detectors;
Conference_Titel :
Optical Detectors and Receivers, IEE Colloquium on
Conference_Location :
London
