• DocumentCode
    1884269
  • Title

    Silicon ultraviolet detectors and modelling

  • Author

    Durant, N.M. ; Fox, N.P.

  • Author_Institution
    Div. of Quantum Metrol., Nat. Phys. Lab., Teddington, UK
  • fYear
    1993
  • fDate
    34269
  • Firstpage
    42370
  • Lastpage
    42374
  • Abstract
    For ultraviolet radiation the use of silicon photodiodes is limited to specific measured wavelengths because of the difficulties involved with interpolation in that spectral region. The authors assess the feasibility of modelling the behaviour of silicon photodiodes sufficiently well to enable accurate interpolation and to associate uncertainties to the use of models describing the operation of silicon photodiodes in the ultraviolet
  • Keywords
    carrier mobility; doping profiles; electron traps; elemental semiconductors; interface electron states; minority carriers; photodiodes; semiconductor device models; silicon; ultraviolet detectors; PC 1D simulator; Si; Si-SiO2; SiO2 coating; absorption coefficient; doping profile; elemental semiconductor; interface trapped charge; interpolation; minority carrier mobility; modelling; photodiodes; quantum field; ultraviolet detectors;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Optical Detectors and Receivers, IEE Colloquium on
  • Conference_Location
    London
  • Type

    conf

  • Filename
    295518
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1884269