Title :
Hybrid optical receivers with integrated electronics
Author :
Lee, W.S. ; Dawe, P.J.G. ; Sitch, J.E. ; Hadjifotiou, A.
Author_Institution :
BNR Europe Ltd., Harlow, UK
Abstract :
10 Gbit/s transimpedance optical receiver front-ends (RFEs) have been implemented with state-of-the-art high speed silicon bipolar and GaAs heterojunction bipolar transistors (HBT) technologies. RFEs with bandwidths between 8 to 10 GHz and sensitivity of around -22 dBm were predicted. Preliminary measurements of the RFEs using the GaAs HBT pre-amplifier design showed -3 dB bandwidths of 9.5-10 GHz and transimpedance of 310-340 Ω. Group delay variations of less than 30 ps have been achieved
Keywords :
bipolar integrated circuits; heterojunction bipolar transistors; integrated optoelectronics; optical receivers; preamplifiers; 10 Gbit/s; 9.5 to 10 GHz; GaAs heterojunction bipolar transistors; HBT pre-amplifier; Si bipolar transistors; circuit simulation; high speed optical links; hybrid optical receivers; integrated electronics; transimpedance optical receiver front-ends; wide bandwidth;
Conference_Titel :
Optical Detectors and Receivers, IEE Colloquium on
Conference_Location :
London
