Title :
Avalanche multiplication and breakdown in GaAs/AlGaAs MQW in structures
Author :
David, J.P.R. ; Rees, G.J. ; Morley, M.J. ; Roberts, J.S. ; Button, C.C. ; Hill, G. ; Grey, R. ; Robson, P.N.
Author_Institution :
Dept. of Electron. & Electr. Eng., Sheffield Univ., UK
Abstract :
The authors studied the effect of MQW dimensions on the ionisation coefficients of a series of MQW pin diodes structures for a wide range of well and barrier size. Breakdown voltage was measured and avalanche multiplication was found to be responsible for the breakdown observed. An analysis is presented for the results obtained
Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; gallium arsenide; impact ionisation; p-i-n photodiodes; semiconductor quantum wells; GaAs-AlGaAs; III-V semiconductors; MQW pin diodes; avalanche multiplication; avalanche photodiodes; breakdown voltage; effect of MQW dimensions; ionisation coefficients;
Conference_Titel :
Optical Detectors and Receivers, IEE Colloquium on
Conference_Location :
London
