Title :
Computer modelling of the InGaAs HFETPD
Author :
Thompson, D. ; Mawby, P ; McCowen, A.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Wales, Swansea, UK
Abstract :
A 2-D device simulation package has been developed which can be used to examine optoelectronic devices ranging from simple PIN Diodes to more recent structures such as the heterojunction field effect transistor photodetector (HFETPD). The HFETPD promises very low noise with avalanche gain and can be practically realised using indium based III-V semiconductors. The main part of the work so far has been centered around the modification and use of the 2-D device simulation package, these modifications have involved the inclusion of various models which describe some of the physics of indium based III-V semiconductors. A recent update has allowed the inclusion of an impact ionisation model
Keywords :
III-V semiconductors; electronic engineering computing; gallium arsenide; impact ionisation; indium compounds; integrated optoelectronics; junction gate field effect transistors; photodetectors; semiconductor device models; 2-D device simulation package; III-V semiconductor; InGaAs; avalanche gain; computer modelling; heterojunction field effect transistor photodetector; impact ionisation model; low noise; optoelectronic devices;
Conference_Titel :
Optical Detectors and Receivers, IEE Colloquium on
Conference_Location :
London
