Improvement of the high frequency performance of HEMTs by bufferless technology

Author

Mateos, Javier ; González, Tomás ; Pardo, Daniel ; Bollaert, Sylvain ; Wallart, X. ; Cappy, Alain

Author_Institution

Dept. de Fisica Aplicada, Salamanca Univ., Spain

fYear

2002

fDate

2002

Firstpage

173

Lastpage

176

Abstract

By means of a 2D Monte Carlo simulation of 50-nm-gate lattice matched AlInAs/InGaAs HEMTs, we show the benefits of using bufferless technology in terms of improvement of the cutoff frequency and noise characteristics. We have found an increase of approximately a 15% in f _c, f_t and f_max. Moreover, though only a slight reduction of 0.2 dB in the minimum noise figure is obtained, the bufferless HEMT shows an important decrease of the noise resistance (almost 5 Ω) and a 2.3 dB increase of the associated gain at 94 GHz

Keywords

III-V semiconductors; Monte Carlo methods; aluminium compounds; equivalent circuits; gallium arsenide; high electron mobility transistors; indium compounds; millimetre wave transistors; semiconductor device models; semiconductor device noise; 2D Monte Carlo simulation; 50 nm; 94 GHz; AlInAs-InGaAs; HF performance; bufferless technology; cutoff frequency; equivalent circuit; high frequency performance; lattice matched AlInAs/InGaAs HEMTs; noise characteristics; noise resistance; Buffer layers; Electrons; Frequency; Geometry; HEMTs; Lattices; MODFETs; Noise figure; Semiconductor device noise; Solid modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

Conference_Location

Stockholm

ISSN

1092-8669

Print_ISBN

0-7803-7320-0

Type

conf

DOI

10.1109/ICIPRM.2002.1014294

Filename

1014294