• DocumentCode
    1885082
  • Title

    A 1V 17.9dBm 60GHz power amplifier in standard 65nm CMOS

  • Author

    Jie-Wei Lai ; Valdes-Garcia, A.

  • Author_Institution
    MediaTek, Hsinchu, Taiwan
  • fYear
    2010
  • fDate
    7-11 Feb. 2010
  • Firstpage
    424
  • Lastpage
    425
  • Abstract
    A CMOS PA integrating a power detector for all IEEE 802.15.3c bands is demonstrated. A fully synchronous power combiner removes design trade-offs between transformer efficiency and power combining efficiency. At 1 V supply, the measured Psat, OP1dB, and peak PAE at 61.5 GHz are 17.9 dBm, 15.4 dBm, and 11.7% respectively. A Psat of +17 dBm and an OP1dB of +14 dBm are achieved across the 57-to-65 GHz band.
  • Keywords
    CMOS analogue integrated circuits; MMIC power amplifiers; field effect MIMIC; low-power electronics; millimetre wave power amplifiers; CMOS PA; IEEE 802.15.3c bands; frequency 60 GHz; power amplifier; power combining efficiency; power detector; size 65 nm; synchronous power combiner; transformer efficiency; voltage 1 V; CMOS technology; Circuits; Feeds; Frequency; Impedance matching; Power amplifiers; Power combiners; Semiconductor device measurement; Shape; Transformers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0193-6530
  • Print_ISBN
    978-1-4244-6033-5
  • Type

    conf

  • DOI
    10.1109/ISSCC.2010.5433870
  • Filename
    5433870
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1885082