Title :
High speed diamond DUV-detector
Author :
Gluche, P. ; Kohn, O. ; Binder, M. ; Adamschik, M. ; Ebert, W. ; Vescan, A. ; Rohrer, E. ; Nebel, C.E. ; Kohn, E.
Author_Institution :
Dept. of Electron Devices & Circuits, Ulm Univ., Germany
Abstract :
Two material systems compete for detector applications in the DUV range, namely GaN and diamond. Whereas GaN with a direct bandgap is intensively studied for light emitting structures, diamond with an indirect bandgap has a long background as particle and X-ray detector. In this study, a diamond DUV-detector based on a MSM structure has been fabricated and characterized. Efficiency, speed and blindness to visible light have been investigated. A charge collection efficiency of approx. 100% at high electric field strength and an ultra fast response (FWHM <4 ns) could be demonstrated
Keywords :
diamond; high-speed optical techniques; metal-semiconductor-metal structures; ultraviolet detectors; 4 ns; C; MSM structure; charge collection efficiency; high speed diamond DUV detector; indirect bandgap; Diamond;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1997. Proceedings., 1997 IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-3970-3
DOI :
10.1109/CORNEL.1997.649372
