DocumentCode :
1885255
Title :
A 53-to-68GHz 18dBm power amplifier with an 8-way combiner in standard 65nm CMOS
Author :
Martineau, Baudouin ; Knopik, V. ; Siligaris, Alexandre ; Gianesello, Frederic ; Belot, Didier
Author_Institution :
STMicroelectronics, Crolles, France
fYear :
2010
fDate :
7-11 Feb. 2010
Firstpage :
428
Lastpage :
429
Abstract :
A 53-to-68 GHz power amplifier with an 8-way combiner in standard 65 nm CMOS meets the wireless HDMI standard. Reliability is improved by solving the issues of time-dependent dielectric breakdown and hot-carrier-injection degradation. The PA output power is 18 dBm.
Keywords :
CMOS integrated circuits; power amplifiers; CMOS; combiner; complementary metal-oxide-semiconductor; frequency 53 GHz to 68 GHz; hot carrier injection degradation; power amplifier; reliability; time-dependent dielectric breakdown; wireless HDMI standard; Bandwidth; Circuits; Electrostatic discharge; Human computer interaction; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Transformers; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International
Conference_Location :
San Francisco, CA
ISSN :
0193-6530
Print_ISBN :
978-1-4244-6033-5
Type :
conf
DOI :
10.1109/ISSCC.2010.5433879
Filename :
5433879
Link To Document :
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