• DocumentCode
    1885261
  • Title

    Annealing characteristics of He+-ion implant isolation of InP/InGaAs HBT structures

  • Author

    Subramaniam, S.C. ; Rezazadeh, A.A. ; Too, P. ; Ahmed, S. ; Sealy, B.J. ; Gwilliam, R.

  • Author_Institution
    Dept. of Electron. Eng., King´´s Coll., London, UK
  • fYear
    2002
  • fDate
    2002
  • Firstpage
    205
  • Lastpage
    208
  • Abstract
    Electrical isolation by He-ion implant isolation on multi-layer InP/InGaAs heterojunction bipolar transistor (HBT) structure has been investigated. The isolation of this structure was tested with a single energy implantation of helium-ion at 600 keV with a dose of 3×1015 cm-2 at room temperature. Post implant annealing was performed for 60s from 50°C to 450°C. Maximum achievable sheet resistance was 8×104 Ω/sq for the collector contact layer, at an annealing temperature of 350°C. Annealing characteristics of implanted HBT layer as a function of annealing time and annealing temperature are reported here for the first time, to the best of our knowledge.
  • Keywords
    III-V semiconductors; annealing; gallium arsenide; heterojunction bipolar transistors; indium compounds; ion implantation; 50 to 450 degC; 60 s; 600 keV; HBT structures; InP-InGaAs; InP/InGaAs; annealing characteristics; annealing temperature; annealing time; collector contact layer; ion implant isolation; post implant annealing; sheet resistance; single energy implantation; Annealing; Etching; Fabrication; Helium; Heterojunction bipolar transistors; Implants; Indium gallium arsenide; Indium phosphide; Photonic band gap; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-7320-0
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2002.1014312
  • Filename
    1014312
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1885261