Effect of particles on buried oxide defects in SIMOX material

Author

Joyner, K. ; El-Ghor, M. ; Hosack, H.

Author_Institution

Texas Instuments, Inc., Dallas, TX, USA

fYear

1991

fDate

1-3 Oct 1991

Firstpage

4

Lastpage

5

Abstract

An array of artificial particles composed of silicon dioxide was created by growing a film of SiO₂ one micron thick on a wafer surface, then patterning and etching the film to create barriers of various sizes and shapes. Two of the more interesting of these shapes are long lines and individual dots. These lines make it practical to analyze the structures by cross-sectional scanning and transmission electron microscopy. The shape of one of the lines after implantation to a dose of 1.8×10¹⁸ at an implantation temperature of 630°C is shown

Keywords

crystal defects; etching; ion implantation; scanning electron microscope examination of materials; semiconductor-insulator boundaries; transmission electron microscope examination of materials; 630 degC; SIMOX material; Si wafer surface; SiO₂-Si; artificial particle array; buried oxide defects; cross sectional SEM; cross sectional TEM; etching; implantation temperature; individual dots; ion implantation dose; long lines; patterning; Conducting materials; Implants; Instruments; Lifting equipment; Shape; Silicon compounds; Sputter etching; Sputtering; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1991. Proceedings, 1991., IEEE International

Conference_Location

Vail Valley, CO

Print_ISBN

0-7803-0184-6

Type

conf

DOI

10.1109/SOI.1991.162828

Filename

162828