Title :
Epitaxially thin InP Schottky diodes for micromachined polymer membrane-on-silicon coplanar waveguides
Author :
Avramescu, Viorel ; Hjort, Klas
Author_Institution :
IMT, Bucharest, Romania
Abstract :
A new method has been developed to integrate III-V electronic devices into a coplanar waveguide silicon technology. InP dices with an ohmic contact and metal conductor layer are glued to a BCB polymer layer on silicon by using a not fully cured resist and applying pick-´n´-place positioning. An etch stop technique is used to obtain. the epilayer diodes (less than 2 μm thick). The Schottky contact is realised with Cr-Au through BCB patterning.
Keywords :
III-V semiconductors; Schottky barriers; Schottky diodes; coplanar waveguides; indium compounds; microwave circuits; microwave diodes; ohmic contacts; semiconductor epitaxial layers; 2 micron; BCB patterning; InP; Schottky contact; coplanar waveguide silicon technology; epitaxially thin Schottky diodes; etch stop technique; metal conductor layer; micromachined polymer membrane-on-silicon coplanar waveguides; ohmic contact; pick-´n´-place positioning; Conductors; Coplanar waveguides; Etching; III-V semiconductor materials; Indium phosphide; Ohmic contacts; Polymers; Resists; Schottky diodes; Silicon;
Conference_Titel :
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
Print_ISBN :
0-7803-7320-0
DOI :
10.1109/ICIPRM.2002.1014316
