Title :
A high-gain 60GHz power amplifier with 20dBm output power in 90nm CMOS
Author :
Law, C.Y. ; Pham, Anh-Vu
Author_Institution :
Univ. of California, Davis, CA, USA
Abstract :
A fully integrated 60 GHz power amplifier using a standard 90 nm CMOS process is presented. The power amplifier consists of six 2-stage power amplifiers, three 2-way Wilkinson power splitters for parallel amplification, and three 2-way Wilkinson power combiners to combine the output power. The power amplifier achieves again of +20 dB, a P1dB of +18 dBm and a Psat of +20 dBm with 1.2 V supply.
Keywords :
CMOS integrated circuits; millimetre wave power amplifiers; power combiners; 2-stage power amplifier; 2-way Wilkinson power combiners; 2-way Wilkinson power splitters; CMOS process; frequency 60 GHz; gain 20 dB; high-gain power amplifier; integrated power amplifier; output power; parallel amplification; size 90 nm; CMOS process; Capacitors; Frequency; High power amplifiers; Impedance matching; Microstrip; Power amplifiers; Power combiners; Power generation; Stability;
Conference_Titel :
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-6033-5
DOI :
10.1109/ISSCC.2010.5433882
