Influence of phosphorus on undoped and zinc doped InGaAs

Author

Karlina, L.B. ; Ber, B.Ya. ; Blagnov, P.A. ; Boiko, A.M. ; Kulagina, M.M. ; Vlasov, A.S.

Author_Institution

A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia

fYear

2002

fDate

2002

Firstpage

213

Lastpage

215

Abstract

Simultaneous diffusion of P and Zn in In_0.53Ga_0.47As using Sn-InP-Zn as a dopant source is investigated. The dependence of the diffusion profiles Zn and P on diffusion time at 600°C is presented. Typical zinc concentration and depths obtained are 10*¹⁹ cm^-3 and 0.5-1.3 μm. The incorporation of P into InGaAs at almost constant concentration for layers of 3-μm thickness was detected. The effects of the exposure of InGaAs to 1 MeV electron fluence 10¹⁵, 10¹⁶ cm^-2 were investigated by photoluminescence and Raman scattering. Results presented here show a slight increase in PL emission after irradiation InGaAs (Zn, P) by fluence of 10¹⁵ cm^-2. The free carrier concentration remains at the same level before and after irradiation.

Keywords

III-V semiconductors; Raman spectra; carrier density; diffusion; doping profiles; electron beam effects; gallium arsenide; indium compounds; phosphorus; photoluminescence; semiconductor doping; zinc; 0.5 to 1.3 micron; 1 MeV; 1 MeV electron irradiation; 600 C; In_0.53Ga_0.47As:P,Zn; Raman scattering; diffusion profiles; diffusion time; free carrier concentration; photoluminescence; simultaneous diffusion; Argon; Electrons; Hydrogen; Indium gallium arsenide; Laser excitation; Photoluminescence; Photovoltaic cells; Raman scattering; Substrates; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

ISSN

1092-8669

Print_ISBN

0-7803-7320-0

Type

conf

DOI

10.1109/ICIPRM.2002.1014325

Filename

1014325