• DocumentCode
    1885704
  • Title

    Thermal interface materials for power electronics applications

  • Author

    Narumanchi, Sreekant ; Mihalic, Mark ; Kelly, Kenneth ; Eesley, Gary

  • Author_Institution
    Nat. Renewable Energy Lab., Golden, CO
  • fYear
    2008
  • fDate
    28-31 May 2008
  • Firstpage
    395
  • Lastpage
    404
  • Abstract
    In a typical power electronics package, a grease layer forms the interface between the direct bond copper (DBC) layer or a baseplate and the heat sink. This grease layer has the highest thermal resistance of any layer in the package. Reducing the thermal resistance of this thermal interface material (TIM) can help achieve the FreedomCAR program goals of using a glycol water mixture at 105degC or even air cooling. It is desirable to keep the maximum temperature of the conventional silicon die below 125degC, trench insulated gate bipolar transistors (IGBTs) below 150degC, and silicon carbide-based devices below 200degC. Using improved thermal interface materials enables the realization of these goals and the dissipation of high heat fluxes. The ability to dissipate high heat fluxes in turn enables a reduction in die size, cost, weight, and volume. This paper describes our progress in characterizing the thermal performance of some conventional and novel thermal interface materials. We acquired, modified, and improved an apparatus based on the ASTM D5470 test method and measured the thermal resistance of various conventional greases. We also measured the performance of select phase-change materials and thermoplastics through the ASTM steady-state and the transient laser flash approaches, and compared the two methodologies. These experimental results for thermal resistance are cast in the context of automotive power electronics cooling. Results from numerical finite element modeling indicate that the thermal resistance of the TIM layer has a dramatic effect on the maximum temperature in the IGBT package.
  • Keywords
    finite element analysis; heat sinks; insulated gate bipolar transistors; power electronics; thermal resistance; FreedomCAR program; automotive power electronics cooling; direct bond copper; finite element modeling; heat sink; insulated gate bipolar transistors; thermal interface; thermal resistance; Bonding; Copper; Electrical resistance measurement; Electronic packaging thermal management; Insulated gate bipolar transistors; Optical materials; Power electronics; Silicon; Temperature; Thermal resistance; ASTM D5470; IGBTs; PCMs; Thermal resistance; greases; laser flash; modeling; steady state; transient;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Thermal and Thermomechanical Phenomena in Electronic Systems, 2008. ITHERM 2008. 11th Intersociety Conference on
  • Conference_Location
    Orlando, FL
  • ISSN
    1087-9870
  • Print_ISBN
    978-1-4244-1700-1
  • Electronic_ISBN
    1087-9870
  • Type

    conf

  • DOI
    10.1109/ITHERM.2008.4544297
  • Filename
    4544297