DocumentCode :
1885738
Title :
Reducing TMR overhead by combining approximate circuit, transistor topology and input permutation approaches
Author :
Gomes, Iuri A. C. ; Kastensmidt, Fernanda G. L.
Author_Institution :
Inst. de Inf., UFRGS, Porto Alegre, Brazil
fYear :
2013
fDate :
2-6 Sept. 2013
Firstpage :
1
Lastpage :
6
Abstract :
The use of Triple Modular Redundancy (TMR) with majority voters can guarantee full single fault masking coverage for a given circuit against transient faults but it has a high area overhead. In order to reduce area overhead without compromising the fault making coverage, TMR can use approximated circuits approach to generate redundant modules that are optimized compared to the original module. Initial study of this technique has shown that it is possible to reach a good balance between fault coverage and area overhead cost, making this technique a good solution for some cases. In this work, we do a further analysis of this approach by using complex gates and employing different transistor topologies and inputs permutation. Results show that area overhead can be reduced to 150% with fault coverage close to 99%.
Keywords :
MOSFET; fault diagnosis; logic circuits; logic gates; radiation hardening (electronics); redundancy; transient analysis; NMOS transistors; PMOS transistors; TMR overhead reduction; approximate circuit; approximated circuit approach; area overhead cost; complex gates; extreme logic masking; fault mitigation technique; full single fault masking coverage; high area overhead; input permutation approach; majority voters; transient faults; transistor topology; triple modular redundancy; Approximation methods; Circuit faults; Logic gates; P-n junctions; Transistors; Tunneling magnetoresistance; Vectors; Approximated circuit; TMR; Transient Faults;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Circuits and Systems Design (SBCCI), 2013 26th Symposium on
Conference_Location :
Curitiba
Type :
conf
DOI :
10.1109/SBCCI.2013.6644856
Filename :
6644856
Link To Document :
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