Title :
Processing of nano(micro)relief InP surface for optoelectronic applications
Author :
Dmitruk, N.L. ; Mayeva, O.I. ; Mamontova, I.B.
Author_Institution :
Inst. for Phys. of Semicond., Acad. of Sci., Kyiv, Ukraine
Abstract :
In this contribution the investigation of nano(micro)relief processing for InP substrates (by varying the wet chemical anisotropic etching) is described in detail. The morphology (quasigratings, dendrites, pyramids) and statistical parameters were investigated with the help of AFM. To select the optimum microrelief processing the optical (reflection) and photoelectric characteristics of both metal/InP and electrolyte/InP barrier structures were measured in UV, Vis and NIR. Results are promising for development of nano(micro)reliefs for optoelectronic application.
Keywords :
III-V semiconductors; atomic force microscopy; dendrites; etching; indium compounds; micromachining; nanotechnology; optoelectronic devices; AFM; InP; NIR measurement; UV measurement; dendrites; electrolyte/InP barrier structures; metal/InP barrier structures; microrelief processing; nanorelief processing; optoelectronic applications; photoelectric characteristics; pyramids; quasigratings; statistical parameters; visible measurement; wet chemical anisotropic etching; Anisotropic magnetoresistance; Atomic force microscopy; Chemicals; Human computer interaction; Indium phosphide; Photonic band gap; Scanning electron microscopy; Substrates; Surface morphology; Wet etching;
Conference_Titel :
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
Print_ISBN :
0-7803-7320-0
DOI :
10.1109/ICIPRM.2002.1014337
