Processing of nano(micro)relief InP surface for optoelectronic applications

Author

Dmitruk, N.L. ; Mayeva, O.I. ; Mamontova, I.B.

Author_Institution

Inst. for Phys. of Semicond., Acad. of Sci., Kyiv, Ukraine

fYear

2002

fDate

2002

Firstpage

233

Lastpage

236

Abstract

In this contribution the investigation of nano(micro)relief processing for InP substrates (by varying the wet chemical anisotropic etching) is described in detail. The morphology (quasigratings, dendrites, pyramids) and statistical parameters were investigated with the help of AFM. To select the optimum microrelief processing the optical (reflection) and photoelectric characteristics of both metal/InP and electrolyte/InP barrier structures were measured in UV, Vis and NIR. Results are promising for development of nano(micro)reliefs for optoelectronic application.

Keywords

III-V semiconductors; atomic force microscopy; dendrites; etching; indium compounds; micromachining; nanotechnology; optoelectronic devices; AFM; InP; NIR measurement; UV measurement; dendrites; electrolyte/InP barrier structures; metal/InP barrier structures; microrelief processing; nanorelief processing; optoelectronic applications; photoelectric characteristics; pyramids; quasigratings; statistical parameters; visible measurement; wet chemical anisotropic etching; Anisotropic magnetoresistance; Atomic force microscopy; Chemicals; Human computer interaction; Indium phosphide; Photonic band gap; Scanning electron microscopy; Substrates; Surface morphology; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

ISSN

1092-8669

Print_ISBN

0-7803-7320-0

Type

conf

DOI

10.1109/ICIPRM.2002.1014337

Filename

1014337