DocumentCode
188599
Title
Investigating the Influence of Interconnection Parasitic Inductance on the Performance of SiC Based DC-DC Converters in Hybrid Vehicles
Author
Di Han ; Woongkul Lee ; Noppakunkajorn, Jukkrit ; Sarlioglu, Bulent
Author_Institution
Wisconsin Electr. Machines & Power Electron. Consortium (WEMPEC), Univ. of Wisconsin-Madison, Madison, WI, USA
fYear
2014
fDate
15-18 June 2014
Firstpage
1
Lastpage
7
Abstract
Silicon carbide (SiC) based devices are known to outperform Si devices in many aspects, such as lower power dissipation, higher operating temperatures, and higher switching frequencies. SiC devices will benefit hybrid vehicles when applied into the DC-DC converters and inverters as part of the electrical power conversion needed to drive the powertrain. Nevertheless, SiC devices can suffer from oscillations as a result of the underdamped response to an RLC circuit composed of device output capacitance, parasitic inductance, and on-state resistance. This paper aims at investigating the influence of the interconnection parasitic inductance on the performance of SiC-based DC-DC converter in hybrid vehicles.
Keywords
DC-DC power convertors; hybrid electric vehicles; inductance; silicon compounds; DC-DC converters; RLC circuit; SiC; SiC based devices; device output capacitance; electrical power conversion; hybrid vehicles; interconnection parasitic inductance; inverters; on-state resistance; oscillations; powertrain; silicon carbide based devices; underdamped response; Inductance; Integrated circuit interconnections; Logic gates; MOSFET; Performance evaluation; Silicon carbide; Vehicles; DC-DC converters; efficiency; hybrid electric vehicles; parasitic inductance; semiconductor loss; silicon carbide power devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Transportation Electrification Conference and Expo (ITEC), 2014 IEEE
Conference_Location
Dearborn, MI
Type
conf
DOI
10.1109/ITEC.2014.6861850
Filename
6861850
Link To Document