• DocumentCode
    188599
  • Title

    Investigating the Influence of Interconnection Parasitic Inductance on the Performance of SiC Based DC-DC Converters in Hybrid Vehicles

  • Author

    Di Han ; Woongkul Lee ; Noppakunkajorn, Jukkrit ; Sarlioglu, Bulent

  • Author_Institution
    Wisconsin Electr. Machines & Power Electron. Consortium (WEMPEC), Univ. of Wisconsin-Madison, Madison, WI, USA
  • fYear
    2014
  • fDate
    15-18 June 2014
  • Firstpage
    1
  • Lastpage
    7
  • Abstract
    Silicon carbide (SiC) based devices are known to outperform Si devices in many aspects, such as lower power dissipation, higher operating temperatures, and higher switching frequencies. SiC devices will benefit hybrid vehicles when applied into the DC-DC converters and inverters as part of the electrical power conversion needed to drive the powertrain. Nevertheless, SiC devices can suffer from oscillations as a result of the underdamped response to an RLC circuit composed of device output capacitance, parasitic inductance, and on-state resistance. This paper aims at investigating the influence of the interconnection parasitic inductance on the performance of SiC-based DC-DC converter in hybrid vehicles.
  • Keywords
    DC-DC power convertors; hybrid electric vehicles; inductance; silicon compounds; DC-DC converters; RLC circuit; SiC; SiC based devices; device output capacitance; electrical power conversion; hybrid vehicles; interconnection parasitic inductance; inverters; on-state resistance; oscillations; powertrain; silicon carbide based devices; underdamped response; Inductance; Integrated circuit interconnections; Logic gates; MOSFET; Performance evaluation; Silicon carbide; Vehicles; DC-DC converters; efficiency; hybrid electric vehicles; parasitic inductance; semiconductor loss; silicon carbide power devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Transportation Electrification Conference and Expo (ITEC), 2014 IEEE
  • Conference_Location
    Dearborn, MI
  • Type

    conf

  • DOI
    10.1109/ITEC.2014.6861850
  • Filename
    6861850