Growth temperature dependence of annealing effect for GaInNAs/GaAs quantum wells grown by metalorganic chemical vapor deposition

Author

Kawaguchi, M. ; Miyamoto, T. ; Minobe, S. ; Koyama, E. ; Iga, K.

Author_Institution

P&I Lab., Tokyo Inst. of Technol., Yokohama, Japan

fYear

2002

fDate

2002

Firstpage

237

Lastpage

240

Abstract

We have investigated the growth temperature dependence of the optical property change induced by a thermal annealing for a GaInNAs/GaAs quantum well grown by metalorganic chemical vapor deposition. We found that the wavelength blue shift induced by the thermal annealing of GaInNAs strongly depends on the growth temperature. The emission wavelength blue shift significantly decreased at growth temperatures lower than 500°C. The obtained result will be useful for improving the performance of GaInNAs lasers especially for vertical-cavity surface-emitting lasers.

Keywords

III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; indium compounds; photoluminescence; quantum well lasers; rapid thermal annealing; semiconductor growth; semiconductor quantum wells; spectral line shift; surface emitting lasers; vapour phase epitaxial growth; 500 degC; GaInNAs lasers; GaInNAs-GaAs; GaInNAs/GaAs quantum well; MOCVD; PL peak wavelength; RTA; VCSEL; emission wavelength blue shift; growth temperature dependence; metal organic chemical vapor deposition; optical property change; photoluminescence measurement; surface-emitting lasers; thermal annealing; vertical-cavity SEL; Annealing; Buffer layers; Chemical vapor deposition; Distributed Bragg reflectors; Gallium arsenide; Optical materials; Optical surface waves; Surface emitting lasers; Temperature dependence; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

ISSN

1092-8669

Print_ISBN

0-7803-7320-0

Type

conf

DOI

10.1109/ICIPRM.2002.1014340

Filename

1014340