Title :
Fabrication of GaAs-based 3-D photonic bandgap materials
Author :
Zhang, C. ; Zavieh, L. ; Mitra, A. ; Mayer, T.S.
Author_Institution :
Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA, USA
Abstract :
Significant advances in the fabrication of 3-D photonic crystals with anticipated bandgaps in the near infrared region are reported. A three-layer photonic bandgap material has been fabricated on a micron scale using a combination of dry etching, selective wet etching, and GaAs-to-GaAs wafer bonding. This experimental demonstration verifies that there are no practical limitations to bonding on top of previously bonded layers. We anticipate that a pronounced gap in transmission will be observed when additional periods are added
Keywords :
III-V semiconductors; etching; gallium arsenide; photonic band gap; wafer bonding; 3D photonic crystals; GaAs; GaAs-based 3-D photonic bandgap materials; GaAs-to-GaAs wafer bonding; dry etching; fabrication technique; micron scale; near infrared region; selective wet etching; three-layer photonic bandgap material; Gallium compounds;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1997. Proceedings., 1997 IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-3970-3
DOI :
10.1109/CORNEL.1997.649376
