Title :
Vacancy-type defects in GaAsN grown by metalorganic vapor phase epitaxy
Author :
Toivonen, J. ; Oila, J. ; Saarinen, K. ; Hakkarainen, T. ; Sopanen, M. ; Lipsanen, H.
Author_Institution :
Optoelectronics Lab., Helsinki Univ. of Technol., Espoo, Finland
Abstract :
Positron annihilation spectroscopy was used to study GaAsN/GaAs epilayers grown by metalorganic vapor phase epitaxy using dimethylhydrazine as a nitrogen source. A clear signal of vacancies in the GaAsN epilayer was found and a rapid increase in density of the vacancies was observed with increasing nitrogen composition. We propose these vacancies to be Ga vacancies in defect complexes.
Keywords :
III-V semiconductors; MOCVD; defect states; gallium arsenide; photoluminescence; positron annihilation; semiconductor epitaxial layers; vacancies (crystal); GaAs; GaAsN-GaAs; GaAsN/GaAs epilayers; N composition; defect complexes; dimethylhydrazine; metalorganic vapor phase epitaxy; photoluminescence spectra; positron annihilation spectroscopy; vacancies; vacancy density; Epitaxial growth; Gallium arsenide; Laboratories; Lattices; Nitrogen; Optical materials; Photonic band gap; Positrons; Spectroscopy; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
Print_ISBN :
0-7803-7320-0
DOI :
10.1109/ICIPRM.2002.1014345
