• DocumentCode
    1886323
  • Title

    A 45nm 1Gb 1.8V phase-change memory

  • Author

    Villa, C. ; Mills, D. ; Barkley, G. ; Giduturi, H. ; Schippers, S. ; Vimercati, D.

  • Author_Institution
    Numonyx, Agrate Brianza, Italy
  • fYear
    2010
  • fDate
    7-11 Feb. 2010
  • Firstpage
    270
  • Lastpage
    271
  • Abstract
    A 45 nm 1 Gb 1.8 V single-level cell (SLC) phase-change memory (PCM) is designed with 85 ns random-access time and 9 MB/s program throughput, featuring read-while-write and over-write program commands. Sensing techniques to enable wide-temperature-range operation and reject wordline noise are presented. The 37.5 mm2 die size uses a double-gate-oxide and triple-Cu-metal process.
  • Keywords
    phase change memories; phase-change memory; single-level cell; size 45 nm; voltage 1.8 V; Fuses; Nonvolatile memory; Phase change materials; Phase change memory; Pulse amplifiers; Resistors; Shape control; Temperature sensors; Tiles; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0193-6530
  • Print_ISBN
    978-1-4244-6033-5
  • Type

    conf

  • DOI
    10.1109/ISSCC.2010.5433916
  • Filename
    5433916
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1886323