Title :
A 45nm 1Gb 1.8V phase-change memory
Author :
Villa, C. ; Mills, D. ; Barkley, G. ; Giduturi, H. ; Schippers, S. ; Vimercati, D.
Author_Institution :
Numonyx, Agrate Brianza, Italy
Abstract :
A 45 nm 1 Gb 1.8 V single-level cell (SLC) phase-change memory (PCM) is designed with 85 ns random-access time and 9 MB/s program throughput, featuring read-while-write and over-write program commands. Sensing techniques to enable wide-temperature-range operation and reject wordline noise are presented. The 37.5 mm2 die size uses a double-gate-oxide and triple-Cu-metal process.
Keywords :
phase change memories; phase-change memory; single-level cell; size 45 nm; voltage 1.8 V; Fuses; Nonvolatile memory; Phase change materials; Phase change memory; Pulse amplifiers; Resistors; Shape control; Temperature sensors; Tiles; Voltage;
Conference_Titel :
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-6033-5
DOI :
10.1109/ISSCC.2010.5433916
